VTE1113 - GaAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

VTE1113 Datasheet Preview — Preview of VTE1113 PDF

Datasheet Details

Part number	VTE1113
Manufacturer	PerkinElmer Optoelectronics
File Size	25.39 KB
Description	GaAs Infrared Emitting Diodes
Datasheet	VTE1113_PerkinElmerOptoelectronics.pdf

VTE1113 Product details

Description

CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power Output (Typ.): -55°

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Published: Apr 17, 2005 |