VTE1113 GaAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

Description

GaAs Infrared Emitting Diodes TO-46 Lensed Package * 940 nm VTE1113 PACKAGE DIMENSIONS inch (mm) .
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .

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Datasheet Specifications

Part number: VTE1113
Manufacturer: PerkinElmer Optoelectronics
File Size: 25.39 KB
Datasheet: VTE1113_PerkinElmerOptoelectronics.pdf
Description: GaAs Infrared Emitting Diodes

Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -55°C to 125°C 200 mW

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VTE1113 GaAs Infrared Emitting Diodes PerkinElmer Optoelectronics

PerkinElmer Optoelectronics VTE1113-like datasheet