VTE3373LA GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

Description

GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package * 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) .
CASE 50A Long T-1 (3 mm) CHIP SIZE: .

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Datasheet Specifications

Part number: VTE3373LA
Manufacturer: PerkinElmer Optoelectronics
File Size: 29.91 KB
Datasheet: VTE3373LA_PerkinElmerOptoelectronics.pdf
Description: GaAlAs Infrared Emitting Diodes

Applications

* It contains a small area, GaAlAs, 880 nm, high efficiency IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100

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VTE3373LA GaAlAs Infrared Emitting Diodes PerkinElmer Optoelectronics

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