VTE3373LA - GaAlAs Infrared Emitting Diodes

Product Overview

PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE3373LA
Manufacturer	PerkinElmer Optoelectronics
File Size	29.91 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE3373LA Datasheet
Additional preview pages of the VTE3373LA datasheet.

Product details

Description

CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications.It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power Out

📁 Similar Datasheet

VTE180-2F32342 - Photoelectric sensors (SICK)
VTE180-2F32444 - Photoelectric sensors (SICK)
VTE180-2F32447 - Photoelectric sensors (SICK)
VTE180-2F32449 - Photoelectric sensors (SICK)
VTE180-2F32482 - Photoelectric sensors (SICK)
VTE180-2F32484 - Photoelectric sensors (SICK)
VTE180-2F32487 - Photoelectric sensors (SICK)
VTE180-2F32489 - Photoelectric sensors (SICK)

Other Datasheets by PerkinElmer Optoelectronics

VTE3372LA - GaAlAs Infrared Emitting Diodes
VTE3374LA - GaAlAs Infrared Emitting Diodes
VTE3322LA - GaAs Infrared Emitting Diodes
VTE3324LA - GaAs Infrared Emitting Diodes
VTE1013 - GaAs Infrared Emitting Diodes
VTE1063 - GaAlAs Infrared Emitting Diodes

Published: Apr 17, 2005 |