Datasheet4U Logo Datasheet4U.com

PSMN009-100W

N-channel TrenchMOS transistor

PSMN009-100W Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* High thermal cycling performance

* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-

PSMN009-100W General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventi.

PSMN009-100W Datasheet (28.85 KB)

Preview of PSMN009-100W PDF

Datasheet Details

Part number:

PSMN009-100W

Manufacturer:

Philips

File Size:

28.85 KB

Description:

N-channel trenchmos transistor.

📁 Related Datasheet

PSMN009-100B N-channel MOSFET (nexperia)

PSMN009-100B N-channel enhancement mode field-effect transistor (Philips)

PSMN009-100P N-channel MOSFET (nexperia)

PSMN009-100P N-channel enhancement mode field-effect transistor (Philips)

PSMN002-25B N-Channel MOSFET (NXP Semiconductors)

PSMN002-25P N-Channel MOSFET (NXP Semiconductors)

PSMN003-25W N-channel logic level TrenchMOS transistor (Philips)

PSMN003-30B N-Channel MOSFET (NXP Semiconductors)

PSMN003-30P N-Channel MOSFET (NXP Semiconductors)

PSMN004-25B N-channel logic level TrenchMOS transistor (Philips)

TAGS

PSMN009-100W N-channel TrenchMOS transistor Philips

Image Gallery

PSMN009-100W Datasheet Preview Page 2 PSMN009-100W Datasheet Preview Page 3

PSMN009-100W Distributor