* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Low thermal resistance g PSMN070-200B; PSMN070-200P QUICK REFERENCE DATA SYMBOL d VDSS = 200 V ID = 35 A RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench
PSMN070-200P Datasheet (149.78 KB)
PSMN070-200P
Philips
149.78 KB
N-channel trenchmos transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor
Product specification August 1999
Philips Semicondu.
📁 Related Datasheet
PSMN070-200B - N-channel transistor
(Philips)
DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor
Product specification August 1999
Philips Semicondu.
PSMN070-200B - N-Channel MOSFET
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PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
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Product data sheet
1. Product profile
1.1 General descr.
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26 March 2013
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.
PSMN002-25B - N-Channel MOSFET
(NXP Semiconductors)
..
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Rev. 01 — 22 October 2001 Product data
1. Description.
PSMN002-25P - N-Channel MOSFET
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1. Description.
PSMN003-25W - N-channel logic level TrenchMOS transistor
(Philips)
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS™ transistor
FEATURES
• ’Trench’ technology • Very low on-state resistan.
