MF1011B900Y - Microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.
handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.
MODE OF OPERATION C
MF1011B900Y Features
* Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes
