MF1011B900Y Datasheet - Philipss

Microwave power transistor

MF1011B900Y Features

* Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes

MF1011B900Y General Description

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer. MODE OF OPERATION C.

MF1011B900Y Datasheet (88.85 KB)

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MF1011B900Y

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Philipss

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88.85 KB

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Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product speciﬁcation Supersedes data of December 1994 1997 Feb 18 Philips.

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MF1011B900Y Microwave power transistor Philipss

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MF1011B900Y Features

MF1011B900Y General Description

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