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MF1011B900Y Datasheet - Philipss

MF1011B900Y Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION C.

MF1011B900Y Features

* Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes

MF1011B900Y_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

MF1011B900Y

Manufacturer:

Philipss

File Size:

88.85 KB

Description:

Microwave power transistor.

MF1011B900Y Distributor

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MF1011B900Y MF1011B900Y Microwave power transistor Philipss