MF1011B900Y Microwave power transistor

Philipss

Description

DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product speciﬁcation Supersedes data of December 1994 1997 Feb 18 Philips.
NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

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Datasheet Specifications

Part number: MF1011B900Y
Manufacturer: Philipss
File Size: 88.85 KB
Datasheet: MF1011B900Y_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Applications

* up to 100 µs pulse width, duty factor 10%
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

MF1011B900Y Distributors

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MF1011B900Y Microwave power transistor Philipss

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