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F1065 RF POWER VDMOS TRANSISTOR

F1065 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1065 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1065 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATIN

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Datasheet Details

Part number
F1065
Manufacturer
Polyfet RF Devices
File Size
36.42 KB
Datasheet
F1065_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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