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F1116 - RF POWER VDMOS TRANSISTOR

F1116 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1116 Features

* gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1116 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

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Datasheet Details

Part number
F1116
Manufacturer
Polyfet RF Devices
File Size
42.55 KB
Datasheet
F1116_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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