Datasheet Details
Part number:
F1174
Manufacturer:
Polyfet RF Devices
File Size:
45.53 KB
Description:
RF POWER VDMOS TRANSISTOR
Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 380 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1174 PATENTED GOLD METALIZED SILICON GATE ENHANCEMEN
