F1427 Datasheet - Polyfet RF Devices

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F1427 RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1427_PolyfetRFDevices.pdf

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Datasheet Details

Part number:

F1427

Manufacturer:

Polyfet RF Devices

File Size:

41.83 KB

Description:

RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1427 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT

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F1427 POWER VDMOS TRANSISTOR Polyfet RF Devices

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