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F1427 RF POWER VDMOS TRANSISTOR

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Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number
F1427
Manufacturer
Polyfet RF Devices
File Size
41.83 KB
Datasheet
F1427_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1427 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT

F1427 Distributors

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POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices F1427-like datasheet