F1427 Datasheet, Transistor, Polyfet RF Devices

F1427 Features

  • Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C

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Part number:

F1427

Manufacturer:

Polyfet RF Devices

File Size:

41.83kb

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📄 Datasheet

Description:

Rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

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Page 2 of F1427

F1427 Application

  • Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet"

TAGS

F1427
POWER
VDMOS
TRANSISTOR
Polyfet RF Devices

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Stock and price

Renesas Electronics Corporation
IC AMP GPS 2.3-4.2GHZ 16VFQFPN
DigiKey
RA81F1427STGNM-BD0
624 In Stock
Qty : 624 units
Unit Price : $5.4
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