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F1430 RF POWER VDMOS TRANSISTOR

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Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number
F1430
Manufacturer
Polyfet RF Devices
File Size
38.03 KB
Datasheet
F1430_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1430 PATENTED GOLD METALIZED SILICON GATE ENHANCEMEN

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POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices F1430-like datasheet