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F1430 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

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Datasheet Details

Part number	F1430
Manufacturer	Polyfet RF Devices
File Size	38.03 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1430_PolyfetRFDevices.pdf

F1430 Product details

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1430.

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Other Datasheets by Polyfet RF Devices

F1401 - RF POWER VDMOS TRANSISTOR
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Published: Mar 30, 2005 |