F1430 Datasheet - Polyfet RF Devices

F1430, RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

datasheet Preview Page 1 from Datasheet4u.com

F1430_PolyfetRFDevices.pdf

F1430 Datasheet Preview — Preview of F1430 PDF

Datasheet Details

Part number:

F1430

Manufacturer:

Polyfet RF Devices

File Size:

38.03 KB

Description:

RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1430 PATENTED GOLD METALIZED SILICON GATE ENHANCEMEN

F1430 Distributors

📁 Related Datasheet

F1400A F1400NC18 F1404ZS F1420 F1421 F1423

📌 All Tags

F1430 POWER VDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices F1430-like datasheet