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F1430 Datasheet - Polyfet RF Devices

F1430 RF POWER VDMOS TRANSISTOR

F1430 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1430 PATENTED GOLD METALIZED SILICON GATE ENHANCEMEN

F1430 Datasheet (38.03 KB)

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Datasheet Details

Part number:

F1430

Manufacturer:

Polyfet RF Devices

File Size:

38.03 KB

Description:

Rf power vdmos transistor.

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F1430 POWER VDMOS TRANSISTOR Polyfet RF Devices

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