Part number:
L2711
Manufacturer:
Polyfet RF Devices
File Size:
40.12 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
L2711 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
Datasheet Details
L2711
Polyfet RF Devices
40.12 KB
Silicon gate enhancement mode rf power ldmos transistor.
📁 Related Datasheet
L2702 SmartACFL Modem (ETC)
L2702-12 SmartACFL Modem (ETC)
L2702-15 SmartACFL Modem (ETC)
L272 DUAL POWER OPERATIONAL AMPLIFIERS (STMicroelectronics)
L272 Dual Power Operational Amplifier (Fairchild Semiconductor)
L2720 LOWDROP DUAL POWER OPERATIONAL AMPLIFIERS (STMicroelectronics)
L2721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
L2722 LOWDROP DUAL POWER OPERATIONAL AMPLIFIERS (STMicroelectronics)
L2711 Distributor