L2711 Datasheet, Transistor, Polyfet RF Devices

L2711 Features

  • Transistor low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Wat

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Part number:

L2711

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Polyfet RF Devices

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40.12kb

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📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

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Page 2 of L2711

L2711 Application

  • Applications Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pro

TAGS

L2711
SILICON
GATE
ENHANCEMENT
MODE
POWER
LDMOS
TRANSISTOR
Polyfet RF Devices

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Stock and price

Carling Technologies
SWITCH ROCKER DPDT 0.4VA 28V
DigiKey
L2711S001-AZZ00-000
0 In Stock
Qty : 10 units
Unit Price : $34.03
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