Part number:
L2711
Manufacturer:
Polyfet RF Devices
File Size:
40.12 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
L2711 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
Datasheet Details
L2711
Polyfet RF Devices
40.12 KB
Silicon gate enhancement mode rf power ldmos transistor.
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