L2721 Datasheet - Polyfet RF Devices

L2721, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices L2721 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Details

Part number:

L2721

Manufacturer:

Polyfet RF Devices

File Size:

42.02 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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L2721 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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