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L2721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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Description

polyfet rf devices L2721 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number
L2721
Manufacturer
Polyfet RF Devices
File Size
42.02 KB
Datasheet
L2721_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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