Part number:
LP801
Manufacturer:
Polyfet RF Devices
File Size:
35.73 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
LP801 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
Datasheet Details
LP801
Polyfet RF Devices
35.73 KB
Silicon gate enhancement mode rf power ldmos transistor.
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