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F1427 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

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Datasheet Details

Part number	F1427
Manufacturer	Polyfet RF Devices
File Size	41.83 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1427_PolyfetRFDevices.pdf

F1427 Product details

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1427.

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Other Datasheets by Polyfet RF Devices

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Published: Mar 30, 2005 |