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PDC3803R - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available D2.

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Datasheet Details

Part number PDC3803R
Manufacturer Potens semiconductor
File Size 883.32 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDC3803R Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC3803R General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Q1 Q2 PPAK5x6 Asymmetric Dual Pin Configuration S2 S2 S2 G2 S1/D2 D1 D1 D1 G1 S2 S2 S2 G2 S1/D2 G1 D1 D1 D1 G1 D1 G2 S1 BVDSS 30V 30V RDSON 9.5m 4.
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