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PDD0956-1

N-Channel MOSFETs

PDD0956-1 Features

* 100V,12A , RDS(ON)=115mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* 100% PB free and Green Device Available App

* lications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym

PDD0956-1 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD0956-1 Datasheet (762.88 KB)

Preview of PDD0956-1 PDF

Datasheet Details

Part number:

PDD0956-1

Manufacturer:

Potens semiconductor

File Size:

762.88 KB

Description:

N-channel mosfets.

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PDD0956-1 N-Channel MOSFETs Potens semiconductor

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