PDD0959 Datasheet (Potens semiconductor)

PDD0959, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDD0959 Features

* -100V,-30A, RDS(ON) 45mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID I