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PDD2612A - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,30A, RDS(ON) =17mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDD2612A
Manufacturer Potens semiconductor
File Size 724.32 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDD2612A Datasheet
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20V N-Channel MOSFETs PDD2612A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 20V RDSON 17m ID 30A Features  20V,30A, RDS(ON) =17mΩ@VGS = 4.
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