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PDD2612A Datasheet - Potens semiconductor

PDD2612A N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD2612A Features

* 20V,30A, RDS(ON) =17mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDD2612A-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDD2612A

Manufacturer:

Potens semiconductor

File Size:

724.32 KB

Description:

N-channel mosfets.

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PDD2612A PDD2612A N-Channel MOSFETs Potens semiconductor

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