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PDH8966A N-Channel MOSFETs

PDH8966A Description

80V N-Channel MOSFETs PDH8966A General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDH8966A Features

* 80V,70A, RDS(ON) =12mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDH8966A
Manufacturer
Potens semiconductor
File Size
717.96 KB
Datasheet
PDH8966A-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
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