PDH8966A

N-Channel MOSFETs

Potens semiconductor

PDH8966A Features

* 80V,70A, RDS(ON) =12mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS

PDH8966A General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDH8966A Datasheet (717.96 KB)

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Datasheet Details

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PDH8966A

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Potens semiconductor

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717.96 KB

Description:

N-channel mosfets.

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PDH8966A N-Channel MOSFETs Potens semiconductor

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PDH8966A Features

PDH8966A General Description

Datasheet Details

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