PDH3902
Potens semiconductor
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N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e
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PDH3960 - N-Channel MOSFETs
(Potens semiconductor)
30V N-Channel MOSFETs
PDH3960
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
PDH3012 - (PDH3012 / PDH3016) THYRISTOR MODULE
(Nihon Inter Electronics)
THYRISTOR MODULE
30A / 1200 to 1600V
P D T 3 0 1 2 P D H 3 0 1 2
P D T 3 0 1 6 P D H 3 0 1 6
FEATURES
* Isolated Base * Dual Thyristors or Thyristo.
PDH3016 - (PDH3012 / PDH3016) THYRISTOR MODULE
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P D T 3 0 1 2 P D H 3 0 1 2
P D T 3 0 1 6 P D H 3 0 1 6
FEATURES
* Isolated Base * Dual Thyristors or Thyristo.
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PDH0966A - N-Channel MOSFETs
(Potens semiconductor)
100V N-Channel MOSFETs
PDH0966A
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDH0970 - N-Channel MOSFETs
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100V N-Channel MOSFETs
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDH0974 - N-Channel MOSFETs
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDH10012 - (PDH10012 / PDH10016) THYRISTOR MODULE
(Nihon Inter Electronics)
THYRISTOR MODULE
100A / 1200 to 1600V
PDT10012 PDH10012
PDT10016 PDH10016
FEATURES
* Isolated Base * Dual Thyristors or Thyristor and Diode Cascade.
PDH10016 - (PDH10012 / PDH10016) THYRISTOR MODULE
(Nihon Inter Electronics)
THYRISTOR MODULE
100A / 1200 to 1600V
PDT10012 PDH10012
PDT10016 PDH10016
FEATURES
* Isolated Base * Dual Thyristors or Thyristor and Diode Cascade.