PDH3960 Datasheet - Potens semiconductor

PDH3960 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDH3960 Features

* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDH3960-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDH3960

Manufacturer:

Potens semiconductor

File Size:

399.69 KB

Description:

N-channel mosfets.

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