PDH3960

N-Channel MOSFETs

Potens semiconductor

PDH3960 Features

* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDH3960 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDH3960 Datasheet (399.69 KB)

PDH3960 Datasheet Preview — Preview of PDH3960 PDF

Datasheet Details

Part number:

PDH3960

Manufacturer:

Potens semiconductor

File Size:

399.69 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDH3902 N-Channel MOSFETs (Potens semiconductor)

PDH3012 (PDH3012 / PDH3016) THYRISTOR MODULE (Nihon Inter Electronics)

PDH3016 (PDH3012 / PDH3016) THYRISTOR MODULE (Nihon Inter Electronics)

PDH308 THYRISTOR MODULE (Nihon Inter Electronics)

PDH0966A N-Channel MOSFETs (Potens semiconductor)

PDH0970 N-Channel MOSFETs (Potens semiconductor)

PDH0974 N-Channel MOSFETs (Potens semiconductor)

PDH0980 N-Channel MOSFETs (Potens semiconductor)

PDH10012 (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)

PDH10016 (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)

TAGS

PDH3960 N-Channel MOSFETs Potens semiconductor

Image Gallery

PDH3960 Features

PDH3960 General Description

Datasheet Details

File Size:

Description:

PDH3960 Distributor