Datasheet4U Logo Datasheet4U.com

PDH4960

N-Channel MOSFETs

PDH4960 Features

* 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ

PDH4960 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDH4960 Datasheet (398.73 KB)

Preview of PDH4960 PDF

Datasheet Details

Part number:

PDH4960

Manufacturer:

Potens semiconductor

File Size:

398.73 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDH4008 THYRISTOR MODULE (Nihon Inter Electronics)

PDH400N16 THYRISTOR MODULE (NIHON DEMPA KOGYO)

PDH400N8 THYRISTOR MODULE (NIHON DEMPA KOGYO)

PDH0966A N-Channel MOSFETs (Potens semiconductor)

PDH0970 N-Channel MOSFETs (Potens semiconductor)

PDH0974 N-Channel MOSFETs (Potens semiconductor)

PDH0980 N-Channel MOSFETs (Potens semiconductor)

PDH10012 (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)

PDH10016 (PDH10012 / PDH10016) THYRISTOR MODULE (Nihon Inter Electronics)

PDH1008 THYRISTOR (KYOCERA)

TAGS

PDH4960 N-Channel MOSFETs Potens semiconductor

Image Gallery

PDH4960 Datasheet Preview Page 2 PDH4960 Datasheet Preview Page 3

PDH4960 Distributor