PDH0966A Datasheet - Potens semiconductor

PDH0966A N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDH0966A Features

* 100V,60A, RDS(ON) =18mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EA

PDH0966A Datasheet (726.49 KB)

PDH0966A Datasheet Preview — Preview of PDH0966A PDF

Datasheet Details

Part number:

PDH0966A

Manufacturer:

Potens semiconductor

File Size:

726.49 KB

Description:

N-channel mosfets.

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PDH0966A N-Channel MOSFETs Potens semiconductor

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