PDL0954 Datasheet (Potens semiconductor)

PDL0954, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDL0954 Features

* 100V,1.7A , RDS(ON)=310mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain