PDL0956 Datasheet (Potens semiconductor)

PDL0956, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDL0956 Features

* 100V,4A , RDS(ON)=120mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD T