PDN3612S Datasheet, N-channel Mosfets, Potens semiconductor

N-channel mosfets

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PDN3612S

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Potens semiconductor

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Description:

N-channel mosfets.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superio.

✔ PDN3612S Features

30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for 2.5V Gate Drive Applications Applications
Notebo

✔ PDN3612S Application

SOT23-3S Pin Configuration D D S G G S BVDSS 30V RDSON 32mΩ ID 5.3A Features
30V, 5.3 A, RDS(ON)

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PDN3612S N-Channel MOSFETs Potens semiconductor