PDN3612S Datasheet - Potens semiconductor

N-Channel MOSFETs

PDN3612S Features

* 30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 2.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbo

PDN3612S General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN3612S Datasheet (566.84 KB)

PDN3612S Datasheet Preview — Preview of PDN3612S PDF

Datasheet Details

Part number:

PDN3612S

Manufacturer:

Potens semiconductor

File Size:

566.84 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDN3611S P-Channel MOSFET (Potens semiconductor)

PDN3643 P-Channel MOSFETs (Potens semiconductor)

PDN3909S P-Channel MOSFET (Potens semiconductor)

PDN3911S P-Channel MOSFETs (Potens semiconductor)

PDN3912S N-Channel MOSFETs (Potens semiconductor)

PDN3913S P-Channel MOSFETs (Potens semiconductor)

PDN3914S N-Channel MOSFETs (Potens semiconductor)

PDN3915S P-Channel MOSFETs (Potens semiconductor)

PDN3916S N-Channel MOSFETs (Potens semiconductor)

PDN001 SCHOTTKY DIODE NETWORK (California Micro Devices Corp)

TAGS

PDN3612S N-Channel MOSFETs Potens semiconductor

Image Gallery

PDN3612S Features

PDN3612S General Description

Datasheet Details

File Size:

Description:

PDN3612S Distributor