PDN3912S Datasheet - Potens semiconductor

PDN3912S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN3912S Features

* 30V,6.5A, RDS(ON) =24mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VG

PDN3912S Datasheet (682.23 KB)

PDN3912S Datasheet Preview — Preview of PDN3912S PDF

Datasheet Details

Part number:

PDN3912S

Manufacturer:

Potens semiconductor

File Size:

682.23 KB

Description:

N-channel mosfets.

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PDN3912S N-Channel MOSFETs Potens semiconductor

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