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PDN3914S Datasheet - Potens semiconductor

PDN3914S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN3914S Features

* 30V,5.5A, RDS(ON) =25mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VG

PDN3914S Datasheet (668.04 KB)

PDN3914S Datasheet Preview — Preview of PDN3914S PDF

Datasheet Details

Part number:

PDN3914S

Manufacturer:

Potens semiconductor

File Size:

668.04 KB

Description:

N-channel mosfets.

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Stock and price

IDEC Corporation

EB3P-LAD1-S

0 In Stock

Qty : 100 units

Unit Price : $66.55

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PDN3914S N-Channel MOSFETs Potens semiconductor

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