PDN3916S Datasheet - Potens semiconductor

PDN3916S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN3916S Features

* 30V,5.1A , RDS(ON)=35mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Paramet

PDN3916S Datasheet (654.37 KB)

PDN3916S Datasheet Preview — Preview of PDN3916S PDF

Datasheet Details

Part number:

PDN3916S

Manufacturer:

Potens semiconductor

File Size:

654.37 KB

Description:

N-channel mosfets.

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PDN3916S N-Channel MOSFETs Potens semiconductor

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