PDN6911S Datasheet - Potens semiconductor

PDN6911S P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN6911S Features

* -60V,-2A, RDS(ON) =190mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-

PDN6911S Datasheet (1.24 MB)

PDN6911S Datasheet Preview — Preview of PDN6911S PDF

Datasheet Details

Part number:

PDN6911S

Manufacturer:

Potens semiconductor

File Size:

1.24 MB

Description:

P-channel mosfet.

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PDN6911S P-Channel MOSFET Potens semiconductor

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