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PDN0910S Datasheet - Potens semiconductor

N-Channel MOSFETs

PDN0910S Features

* 100V,2A, RDS(ON) =200mĪ©@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed App

* licGaretieonnDsevice Available

* Networking

* Load Switch

* LED applications S Absolute Maximum Ratings Tc=25ā„ƒ unless otherwise noted Symbol VDS VGS ID IDM PD

PDN0910S General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN0910S Datasheet (468.99 KB)

Preview of PDN0910S PDF

Datasheet Details

Part number:

PDN0910S

Manufacturer:

Potens semiconductor

File Size:

468.99 KB

Description:

N-channel mosfets.

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PDN0910S N-Channel MOSFETs Potens semiconductor

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