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PDN2309S P-Channel MOSFET

PDN2309S Description

20V P-Channel MOSFETs PDN2309S General .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDN2309S Features

* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDN2309S
Manufacturer
Potens semiconductor
File Size
435.25 KB
Datasheet
PDN2309S-Potenssemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Potens semiconductor
Potens semiconductor PDN2309S-like datasheet