PDN2309S P-Channel MOSFET

Potens semiconductor

Description

20V P-Channel MOSFETs PDN2309S General .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

PDN2309S Distributors

📁 Related Datasheet

📌 All Tags

Potens semiconductor PDN2309S-like datasheet