PDN2312S Datasheet - Potens semiconductor

PDN2312S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN2312S Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symb

PDN2312S-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDN2312S

Manufacturer:

Potens semiconductor

File Size:

403.85 KB

Description:

N-channel mosfets.

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PDN2312S PDN2312S N-Channel MOSFETs Potens semiconductor

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