PDN2312S N-Channel MOSFETs

Potens semiconductor

Description

20V N-Channel MOSFETs PDN2312S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

PDN2312S Distributors

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