PDN2317S Datasheet - Potens semiconductor

PDN2317S P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN2317S Features

* -20V,-2.5A, RDS(ON) =160mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise note

PDN2317S-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDN2317S

Manufacturer:

Potens semiconductor

File Size:

468.24 KB

Description:

P-channel mosfet.

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PDN2317S PDN2317S P-Channel MOSFET Potens semiconductor

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