PDN2317S P-Channel MOSFET

Potens semiconductor

Description

20V P-Channel MOSFETs PDN2317S General .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* -20V,-2.5A, RDS(ON) =160mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

PDN2317S Distributors

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