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PDN2311S P-Channel MOSFET

PDN2311S Description

20V P-Channel MOSFETs PDN2311S General .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDN2311S Features

* -20V,-4.7A, RDS(ON)=50mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDN2311S
Manufacturer
Potens semiconductor
File Size
575.50 KB
Datasheet
PDN2311S-Potenssemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Potens semiconductor
Potens semiconductor PDN2311S-like datasheet