PDN2313S Datasheet (Potens semiconductor)

PDN2313S, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN2313S Features

* -20V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted