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PDN2309 Datasheet - Potens semiconductor

PDN2309-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDN2309

Manufacturer:

Potens semiconductor

File Size:

464.41 KB

Description:

P-channel mosfets.

PDN2309, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN2309 Features

* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=2

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