Datasheet4U Logo Datasheet4U.com
2 views

PDN2309 Datasheet - Potens semiconductor

P-Channel MOSFETs

PDN2309 Features

* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=2

PDN2309 General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN2309 Datasheet (464.41 KB)

Preview of PDN2309 PDF

Datasheet Details

Part number:

PDN2309

Manufacturer:

Potens semiconductor

File Size:

464.41 KB

Description:

P-channel mosfets.

📁 Related Datasheet

PDN2307 P-Channel MOSFETs (Potens semiconductor)

PDN2309S P-Channel MOSFET (Potens semiconductor)

PDN2311S P-Channel MOSFET (Potens semiconductor)

PDN2312S N-Channel MOSFETs (Potens semiconductor)

PDN2313S P-Channel MOSFET (Potens semiconductor)

PDN2314S N-Channel MOSFETs (Potens semiconductor)

PDN2315S P-Channel MOSFET (Potens semiconductor)

PDN2316S N-Channel MOSFETs (Potens semiconductor)

PDN2317S P-Channel MOSFET (Potens semiconductor)

PDN2318S N-Channel MOSFETs (Potens semiconductor)

TAGS

PDN2309 P-Channel MOSFETs Potens semiconductor

Image Gallery

PDN2309 Datasheet Preview Page 2 PDN2309 Datasheet Preview Page 3

PDN2309 Distributor