PDN02P15S Datasheet (Potens semiconductor)

PDN02P15S, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN02P15S Features

* -150V,-1A, RDS(ON) =750mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Networking

* Load Switch

* LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter D