PDQ2116 N+P Channel MOSFETs

Potens semiconductor

Description

20V N+P Dual Channel MOSFETs PDQ2116 General .
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: PDQ2116
Manufacturer: Potens semiconductor
File Size: 898.12 KB
Datasheet: PDQ2116-Potenssemiconductor.pdf
Description: N+P Channel MOSFETs

Features

* Fast switching
* Green Device Available

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PDQ2116 N +P Channel MOSFETs Potens semiconductor

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