PDQ2116 Datasheet - Potens semiconductor

N+P Channel MOSFETs

PDQ2116 Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking G2

* Hand-held Instruments G1 S2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parame

PDQ2116 General Description

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provide superior switching performance, and withstand h.

PDQ2116 Datasheet (898.12 KB)

PDQ2116 Datasheet Preview — Preview of PDQ2116 PDF

Datasheet Details

Part number:

PDQ2116

Manufacturer:

Potens semiconductor

File Size:

898.12 KB

Description:

N+p channel mosfets.

📁 Related Datasheet

PDQ2215 Dual P-Channel MOSFETs (Potens semiconductor)

PDQ2218 Dual N-Channel MOSFETs (Potens semiconductor)

PDQ2307 P-Channel MOSFETs (Potens semiconductor)

PDQ2307 20V P-Channel MOSFETs (Potens semiconductor)

PDQ02N15 N-Channel MOSFETs (Potens semiconductor)

PDQ0854-R Dual N-Channel MOSFETs (Potens semiconductor)

PDQ3714 N+P Channel MOSFETs (Potens semiconductor)

PDQ3907 P-Channel MOSFETs (Potens semiconductor)

PDQ3909 P-Channel MOSFETs (Potens semiconductor)

PDQ3911 P-Channel MOSFETs (Potens semiconductor)

TAGS

PDQ2116 N +P Channel MOSFETs Potens semiconductor

Image Gallery

PDQ2116 Features

PDQ2116 General Description

Datasheet Details

File Size:

Description:

PDQ2116 Distributor