PDQ2218 Datasheet - Potens semiconductor

Dual N-Channel MOSFETs

PDQ2218 Features

* 20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted S

PDQ2218 General Description

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

PDQ2218 Datasheet (918.52 KB)

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Datasheet Details

Part number:

PDQ2218

Manufacturer:

Potens semiconductor

File Size:

918.52 KB

Description:

Dual n-channel mosfets.

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PDQ2218 Dual N-Channel MOSFETs Potens semiconductor

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PDQ2218 Features

PDQ2218 General Description

Datasheet Details

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