PMX100N06T - N-Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PMX100N06T Features
* 60V,100A,RDS(ON)=8mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Motor Drive
* Power Tools
* LED Lighting S GD S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM E
