PMXB360ENEA N-channel Trench MOSFET

NXP

Description

DF N1 01 PMXB360ENEA 16 September 2013 0D -3 80 V, N-channel Trench MOSFET Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMXB360ENEA
Manufacturer: NXP ↗
File Size: 243.15 KB
Datasheet: PMXB360ENEA_NXP.pdf
Description: N-channel Trench MOSFET

Features

* Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applica

Applications

* Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Ta

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PMXB360ENEA N-channel Trench MOSFET NXP

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