PMXB65UPE - P-channel MOSFET

nexperia

PMXB65UPE Datasheet Preview — Preview of PMXB65UPE PDF

Datasheet Details

Part number	PMXB65UPE
Manufacturer	nexperia ↗
File Size	732.98 KB
Description	P-channel MOSFET
Datasheet	PMXB65UPE-nexperia.pdf

PMXB65UPE Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection 1.5 kV HBM.
Drain-source on-state resistance RDSon = 59 mΩ.
Very low gate-source threshold voltage for portable.

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Published: Jul 28, 2019 |