PMXB65UPE P-channel MOSFET

nexperia

Description

PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMXB65UPE
Manufacturer: nexperia ↗
File Size: 732.98 KB
Datasheet: PMXB65UPE-nexperia.pdf
Description: P-channel MOSFET

Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1.5 kV HBM
* Drain-source on-state resistance RDSon = 59 m

Applications

* VGS(th) = -0.68 V 3. Applications
* High-side load switch and charging switch for portable devices
* Power management in battery driven portables
* LED driver
* DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions

PMXB65UPE Distributors

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PMXB65UPE P-channel MOSFET nexperia

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