PMXB65UPE

P-channel MOSFET

nexperia

* Trench MOSFET technology

* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

* Exposed drain pad for excellent thermal conduction

* ElectroStatic Discharge (ESD) protection 1.5 kV HBM

* Drain-source on-state resistance RDSon = 59 m

PMXB65UPE

732.98 KB

P-channel mosfet.

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PMXB65UPE P-channel MOSFET nexperia

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