PMXB56EN N-channel Trench MOSFET

NXP

Description

DFN1010D-3 PMXB56EN 30 V, N-channel Trench MOSFET 11 January 2017 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMXB56EN
Manufacturer: NXP ↗
File Size: 349.16 KB
Datasheet: PMXB56EN_NXP.pdf
Description: N-channel Trench MOSFET

Features

* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* Very low Drain-Source on-state resistance RDSon = 49 mΩ

Applications

* Low-side load switch and charging switch for portable devices
* Power management in battery-driven portables
* LED driver
* DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source volt

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PMXB56EN N-channel Trench MOSFET NXP

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