PMXB65ENE - N-channel Trench MOSFET

NXP

PMXB65ENE Datasheet Preview — Preview of PMXB65ENE PDF

Datasheet Details

Part number	PMXB65ENE
Manufacturer	NXP ↗
File Size	265.04 KB
Description	N-channel Trench MOSFET
Datasheet	PMXB65ENE_NXP.pdf

PMXB65ENE Product details

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ 3.

📁 PMXB65ENE Similar Datasheet

PMXB65UPE - P-channel MOSFET (nexperia)
PMXB75UPE - P-channel MOSFET (nexperia)
PMX - Surface Mouny Crystals (MTRONPTI)
PMX100N06T - N-Channel MOSFETs (Potens semiconductor)
PMX100UNE - N-channel Trench MOSFET (nexperia)
PMX400UP - P-channel Trench MOSFET (nexperia)
PMX400UPE - 20V P-Channel MOSFET (nexperia)

Other Datasheets by NXP

PMXB120EPE - P-channel Trench MOSFET
PMXB350UPE - P-channel Trench MOSFET
PMXB360ENEA - N-channel Trench MOSFET
PMXB40UNE - N-channel Trench MOSFET
PMXB43UNE - N-channel Trench MOSFET
PMXB56EN - N-channel Trench MOSFET

Published: Nov 11, 2013 |