PMXB350UPE P-channel Trench MOSFET

NXP

Description

DF N1 01 PMXB350UPE 19 September 2013 0D -3 20 V, P-channel Trench MOSFET Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMXB350UPE
Manufacturer: NXP ↗
File Size: 258.83 KB
Datasheet: PMXB350UPE_NXP.pdf
Description: P-channel Trench MOSFET

Features

* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 100 mΩ

Applications

* High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source

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PMXB350UPE P-channel Trench MOSFET NXP

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