PMXB350UPE - P-channel Trench MOSFET

NXP

PMXB350UPE Datasheet Preview — Preview of PMXB350UPE PDF

Datasheet Details

Part number	PMXB350UPE
Manufacturer	NXP ↗
File Size	258.83 KB
Description	P-channel Trench MOSFET
Datasheet	PMXB350UPE_NXP.pdf

PMXB350UPE Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 100 mΩ 3.

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Published: Nov 11, 2013 |