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PMXB75UPE P-channel Trench MOSFET

PMXB75UPE Description

DFN1010D-3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

PMXB75UPE Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1.5 kV HBM
* Drain-source on-state resistance RDSon = 69 m

PMXB75UPE Applications

* VGS(th) = -0.68 V 3. Applications
* High-side load switch and charging switch for portable devices
* Power management in battery driven portables
* LED driver
* DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions

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Datasheet Details

Part number
PMXB75UPE
Manufacturer
NXP ↗
File Size
250.23 KB
Datasheet
PMXB75UPE-NXP.pdf
Description
P-channel Trench MOSFET

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P-channel Trench MOSFET NXP
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