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PMXB65ENE N-Channel MOSFET

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Description

PMXB65ENE 30 V, N-channel Trench MOSFET 3 November 2016 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

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Features

* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1 kV
* Very low Drain-Source on-state resistance RDSon = 44 mΩ 3

Applications

* Low-side load switch and charging switch for portable devices
* Power management in battery-driven portables
* LED driver
* DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source volt

PMXB65ENE Distributors

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