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PDD4960 N-Channel MOSFETs

PDD4960 Description

40V N-Channel MOSFETs PDD4960 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD4960 Features

* 40V, 90A, RDS(ON) =3.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDD4960
Manufacturer
Potens semiconductor
File Size
674.81 KB
Datasheet
PDD4960-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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