PDEV2220V - Dual N-Channel MOSFETs
These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
PDEV2220V Features
* Fast switching
* Green Device Available
* Suit for 1.5V Gate Drive Applications SOT963 Dual Pin Configuration D1G2 S2 D1 G1 G2 Applications D2
* Notebook
* Load Switch
* Networking
* Hand-held Instruments S1 G1 D2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless othe
